Applied Physics Letters · 2008 · 147 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Thin FilmsThin-film DepositionThin-film MaterialsThin-film TransistorsAluminum-doped Zinc OxideOxide Thin-film TransistorsSubthreshold SwingThin-film OxidesTransparent Conducting FilmsTransparent Conductive OxidesTransparent Thin-film TransistorsTransparent Transistors
We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.
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