Influence of developer and development conditions on the behavior of high molecular weight electron beam resists

Abstract

The nature of the developer and development conditions of high molecular weight electron beam resists is known to influence sensitivity, contrast, line edge roughness, and ultimate resolution. These resist characteristics are explained using a dissolution model based on reptation theory and predictions are compared with experimental results on high molecular weight poly(methylmethacrylate) developed in a range of solvent mixtures and conditions, including ultrasonically assisted development.