MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates - Concepedia

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MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates

16

Citations

15

References

2012

Year

R. Ravash, A. Dadgar, F. Bertram, Anja Dempewolf, Sebastian Metzner, Thomas Hempel, J. Christen, A. Krost

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideMovpe GrowthGan Power DevicePlanar SiCategoryiii-v SemiconductorOptoelectronics

References

	Year	Citations

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