Interface-Treated Josephson Junctions in Trilayer Structures

Abstract

We have demonstrated interface-treated Josephson junctions without deposited barriers in a trilayer structure. In the junctions, barriers were formed through an etching process and an annealing process for base YBa 2 Cu 3 O 7- x (YBCO) films. The junctions showed resistively-shunted-junction-type characteristics over the entire temperature range below 70 K. A magnetic field modulation of more than 80% was observed throughout the operating temperature range. The obtained I c R n product was 2.1 mV at 4.2 K. The 1σ spreads in the junction parameters of 10% or better were observed for eight out of nine junctions in a chip.