Applied Physics Letters · 2014 · 25 citations · 23 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsPhotovoltaic MaterialsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSolar Cell MaterialsSolar CellsAmorphous RegionsArea EfficiencyGrain BoundariesInorganic CrystalsSolar Cell CharacterizationThin-film Solar CellsTransition Metal DichalcogenidesZinc Sulfides
This work presents a detailed analysis of the microstructure and the composition of our record Cu2ZnSnSe4 (CZTSe)-CdS-ZnO solar cell with a total area efficiency of 9.7%. The average composition of the CZTSe crystallites is Cu1.94Zn1.12Sn0.95Se3.99. Large crystals of ZnSe secondary phase (up to 400 nm diameter) are observed at the voids between the absorber and the back contact, while smaller ZnSe domains are segregated at the grain boundaries and close to the surface of the CZTSe grains. An underlying layer and some particles of CuxSe are observed at the Mo-MoSe2-Cu2ZnSnSe4 interface. The free surface of the voids at the back interface is covered by an amorphous layer containing Cu, S, O, and C, while the presence of Cd, Na, and K is also observed in this region.
23
Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
Wei Wang, Mark T. Winkler, Oki Gunawan et al. · Advanced Energy Materials · 2013 · 3.2K citations