Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation - Concepedia

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Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation

13

Citations

3

References

1991

Year

D. Schmitz, G. Strauch, H. Jürgensen, M. Heyen

Journal of Crystal Growth

SemiconductorsMaterials ScienceSubstrate RotationGas Foil TechniqueEngineeringSurface ScienceApplied PhysicsSemiconductor MaterialThin FilmsEpitaxial GrowthCompound SemiconductorChemical Vapor Deposition

References

	Year	Citations

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