Impact ionization rates for electrons and holes in Al0.48In0.52As

Abstract

The first measurement of the impact ionization rates for electrons and holes in Al0.48In0.52As is reported. Photomultiplication measurements in pin avalanche photodiodes give α/β≊2.5–3.0 in the electric field range 3.3×105 V/cm≤F≤4.3×105 V/cm. This material can therefore be used to implement a potentially high-performance, long-wavelength avalanche photodiode, with separate absorption and multiplication regions and a high-low electric field profile (HI-LO SAM APD).