Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions

The advanced unified defect model for Schottky barrier formation

W. E. Spicer, Z. Liliental‐Weber, E. R. Weber et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 396 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature

B. Akkal, Z. Benamara, A. Boudissa et al. · Materials Science and Engineering B · 1998 · 78 citations

Electrical Engineering, Au/insb/inp Schottky Systems, Engineering +5

High-barrier height Schottky diodes on <i>N</i>-InP by deposition on cooled substrates

Zhenqi Shi, Richard L. Wallace, Wayne A. Anderson · Applied Physics Letters · 1991 · 64 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

On the formation of binary compounds in Au/InP system

A. Piotrowska, P Auvray, A. Guivarc’h et al. · Journal of Applied Physics · 1981 · 60 citations

Engineering, Solid-state Chemistry, Computational Chemistry +17

Behavior of Au/InP Schottky diodes under heat treatment

N. Szydlo, J. Olivier · Journal of Applied Physics · 1979 · 47 citations

Materials Engineering, Materials Science, Electrical Engineering +12