Electrical and optical characterization of electron beam evaporated In2Se3 thin films

Abstract

Electrical and optical measurements are carried out on In2Se3 polycrystalline thin films obtained by electron beam evaporation and thermally annealed at different temperatures. The temperature dependence of Hall mobility and dc conductivity is tentatively explained in terms of Petritz's model where the scattering is due to the grain boundaries of the polycrystallites. The effect of grain sizes on the mobility and the barrier height is also reported. The optical results indicate that the absorption mechanism is due to an indirect transition. The energy gap in the as-deposited samples is about 1.40 eV and increases with thermal annealing.