High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochy, I. A. Slovinsky, M. V. Maximov, M. M. Kulagina, E. M. Arakcheeva, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskiĭ

Semiconductors · 2012 · 12 citations · 12 references

Concepts

Abstract

Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on InAs/InGaAs quantum dots.

References

12