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Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) I<inf>DLIN</inf> Technique
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2007
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EngineeringNbti Physical MechanismMaterial DependenceIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceElectronic DevicesNitrogen DensityNanoelectronicsSilicon OxynitrideMaterials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyBias Temperature InstabilitySemiconductor Device FabricationMicroelectronicsApplied PhysicsCondensed Matter PhysicsField Dependencies
An ultra-fast on-the-fly (UF-OTF) I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DLIN</sub> technique having 1 mus resolution is developed and used to study gate insulator process dependence of NBTI in silicon oxynitride (SiON) p- MOSFETs. The nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored.