Publication | Closed Access
MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer
21
Citations
19
References
2009
Year
Materials ScienceMaterials EngineeringElectrical EngineeringAld-grown Al2o3 InterlayerEngineeringAluminium NitrideWide-bandgap SemiconductorSurface ScienceApplied PhysicsMocvd GrowthAluminum Gallium NitrideGan Power Device
| Year | Citations | |
|---|---|---|
Page 1
Page 1