Hongbo Yu

Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy

Hongbo Yu, L. K. Lee, Taeil Jung · Applied Physics Letters · 2007 · 61 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

Hongbo Yu, Deniz Çalışkan, Ekmel Özbay · Journal of Applied Physics · 2006 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN

Serkan Bütün, Mutlu Gökkavas, Hongbo Yu et al. · Applied Physics Letters · 2006 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Correlation of crystalline defects with photoluminescence of InGaN layers

N. N. Faleev, Balakrishnam Jampana, Omkar Jani et al. · Applied Physics Letters · 2009 · 32 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Solar-blind AlxGa1−xN-based avalanche photodiodes

Turgut Tut, Serkan Bütün, Bayram Bütün et al. · Applied Physics Letters · 2005 · 30 citations

Engineering, Materials Engineering, Materials Science +17