Hongbo Yu - Concepedia

Author

Hongbo Yu

Bilkent University

Also Known As

HongBo Yu, Hongbo Yu

Publications

495

Citations

H-Index

Concepts

All Affiliations

Bilkent University Georgia Institute of Technology Gazi University University of Delaware

About

Hongbo Yu is an author at Bilkent University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	433
2	Applied Physics	13	17	433
3	Electrical Engineering	11	12	317
4	Materials Engineering	4	4	83
5	Chemical Engineering	1	1	11

Hongbo Yu

Publications

461

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy Hongbo Yu, Ling Kai Lee, Taeil Jung Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2007	61
Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications Hongbo Yu, Deniz Çalışkan, Ekmel Özbay Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2006	57
Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN Serkan Bütün, Mutlu Gökkavas, Hongbo Yu, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2006	33
Correlation of crystalline defects with photoluminescence of InGaN layers N. N. Faleev, Balakrishnam Jampana, Omkar Jani, Applied Physics Letters Materials ScienceLayer ThicknessElectrical EngineeringOptical MaterialsEngineering	2009	32
Solar-blind AlxGa1−xN-based avalanche photodiodes Turgut Tut, Serkan Bütün, Bayram Bütün, Applied Physics Letters Electrical EngineeringEngineeringPhotocurrent Voltage CharacteristicsApplied PhysicsAlxga1−xn∕gan-based Avalanche Photodiodes	2005	30
MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35 Hongbo Yu, Erkin Ulker, Ekmel Özbay Journal of Crystal Growth Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringMocvd Growth	2006	28
Improvement of breakdown characteristics in AlGaN/GaN/Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N HEMT based on a grading Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N buffer layer Hongbo Yu, S.B. Lişesivdin, Basar Bolukbas, physica status solidi (a) Wide-bandgap SemiconductorBreakdown CharacteristicsElectrical EngineeringEngineeringGan Buffer	2010	26
Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength Serkan Bütün, Turgut Tut, Bayram Bütün, Applied Physics Letters Aluminium NitridePhotonicsElectrical EngineeringOptical MaterialsLow Cutoff Wavelength	2006	23
Electrical and magnetic properties of Ga1−xGdxN grown by metal organic chemical vapor deposition Shalini Gupta, Tahir Zaidi, Andrew Melton, Journal of Applied Physics Materials EngineeringSpintronicsMagnetic PropertiesMaterials ScienceSemiconductors	2011	23
MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer William E. Fenwick, Nola Li, Tianming Xu, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringAld-grown Al2o3 InterlayerEngineering	2009	21

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