Impurity-induced layer disordering of high gap In<i>y</i>(Al<i>x</i>Ga1−<i>x</i>)1−<i>y</i>P heterostructures

Abstract

Data are presented showing the impurity-induced layer disordering (IILD), via low-temperature (600–675 °C) Zn diffusion, of In0.5(AlxGa1−x)0.5P quantum well heterostructures and an In0.5Al0.2Ga0.3P-GaAs heterojunction grown using metalorganic chemical vapor deposition. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence are used to confirm IILD, which occurs via atom intermixing on the column III site aided by column-III-atom interstitials. In addition, high-temperature anneals (800–850 °C) are performed on the same crystals to confirm the thermal stability of the heterointerfaces.