Publication | Closed Access
Microplasmas in Silicon p-n Junctions as Detectors for Gamma Radiation
12
Citations
4
References
1963
Year
Nuclear PhysicsMeasurementCounting DeviceRadiation PhysicsRadiation ExposureSilicon P-n JunctionsSilicon On InsulatorTreatment VerificationRadiation ProtectionSmall DimensionsRadiation Testingγ RadiationInstrumentationRadiation ImagingRadiation OncologyHealth SciencesPhotonicsElectrical EngineeringRadiation DetectionPhysicsRadiation MonitoringIonizing RadiationSingle Event EffectsSemiconductor Device FabricationRadiation ApplicationRadiation EffectsSynchrotron RadiationDosimetryApplied PhysicsRadiation DoseDetector PhysicMedicineOptoelectronics
A counting device of very small dimensions is described which may preferably be used as counter for γ radiation. When operating a silicon diode (alloyed type) in its prebreakdown region, where the breakdown is unstable and giving voltage pulses, the rate of these pulses is a linear function of the incident radiation. In that way the device shows a behavior like a Geiger-Müller tube with large breakdown pulses and small ``deadtime'' (several micro-seconds). Measurements were taken with a 350-C Co60 source in the range of 10 to 104 R/h. As an extrapolation indicates, the device may be used for dose rate measurements up to 107 R/h. Temperature and time stability of the effect are discussed.
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