IEEE Transactions on Microwave Theory and Techniques · 1988 · 14 citations · 19 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesFeedback AmplifiersHigh-frequency Semiconductor DevicesImpedance MatchingIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsBandwidthGaas Monolithic Microwave Integrated CircuitsHigh-frequency Amplifier DesignHigh-gain AmplifiersMicrowave Amplifier DesignMonolithic Microwave Integrated Circuit AmplifiersMonolithic Microwave Integrated Circuit DesignRadio-frequency Integrated Circuit Design
Feedback around cascode stages is demonstrated to be a useful means of making matched direct coupled amplifiers with higher bandwidths than afforded by conventional common-source topologies. Design techniques are described for an amplifier which is capable of operation to DC and which exhibits a measured gain of 26 dB, a 3.2 GHz bandwidth, and a 2.5:1 VSWR in a 1- mu m GaAs MESFET process. A novel adjustment scheme is introduced whereby the amplifier's frequency response can be modified using a DC bias voltage to ensure stable circuit operation in spite of MESFET modeling inaccuracies and GaAs processing variations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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