Concepedia

Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment

Fumihiko Hirose, Yuta Kinoshita, Suguru Shibuya, Y. Narita, Yutaka Takahashi, Hironobu Miya, Kazuro Hirahara, Yoshinari Kimura, Michio Niwano

Thin Solid Films · 2010 · 42 citations · 14 references

DOI

Concepts

References

14

Ideal hydrogen termination of the Si (111) surface

G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations

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Hydroxyl groups on silica surface

Michael L. Hair · Journal of Non-Crystalline Solids · 1975 · 292 citations

, , +14

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

, , +17

ALD of SiO[sub 2] at Room Temperature Using TEOS and H[sub 2]O with NH[sub 3] as the Catalyst

J. D. Ferguson, E.R. Smith, Alan W. Weimer et al. · Journal of The Electrochemical Society · 2004 · 136 citations

, , +15

Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma

Sang M. Han, Eray S. Aydil · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 115 citations

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