Improved Resistive Switching Properties of Solution-Processed TiO_xFilm by Incorporating Atomic Layer Deposited TiO₂layer

Abstract

Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiO x active layers, we incorporated an additional thin TiO 2 (∼8 nm) layer by atomic layer deposition. The bilayered titanium oxide active layer showed a significantly improved performance, such as a larger ON/OFF ratio, a stable resistive switching over 100 times under a dc voltage sweep, cell-to-cell uniformity, and high device yield (>90%). These improved properties can be explained by the transition of the resistive switching mechanism from filamentary switching through the defective side in solution-processed TiO x to interfacial switching resulting from the oxygen ion migration between two active layers.