Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs

Abstract

The first observation of neutron induced single event catastrophic failures in silicon carbide (SiC) power MOSFETs, specifically 1200V 24A Cree CMF10120D SiC power MOSFETs, is presented. The stress voltage at which these failures were observed is VDS>800V. At the highest rated drain bias of 1200V (and VGS=0V), we expect that this discrete power MOSFET will not suffer a catastrophic failure in more than 200 years at sea level due to terrestrial neutrons. The knowledge of this failure probability is important for the integration of the nascent silicon carbide high power MOSFETs into next generation high efficiency power systems.