Publication | Closed Access
Study on the interaction between Ag and tris(8‐hydroxyquinoline) aluminum using x‐ray photoelectron spectroscopy
28
Citations
15
References
2001
Year
Aluminium NitrideEngineeringOrganic Electronics/Indium Tin OxideAlq 3Optoelectronic DevicesChemistryLuminescence PropertyChemical EngineeringMaterials ScienceInorganic ChemistryPhotoluminescencePhotochemistryX‐ray Photoelectron SpectroscopyOptoelectronic MaterialsVacuum EvaporationElemental MetalWhite OledElectronic MaterialsSurface ScienceApplied PhysicsOptoelectronicsSolar Cell Materials
Abstract In the present study, model organic light‐emitting diodes (OLEDs) with a structure of Ag/tris(8‐hydroxyquinoline) aluminum (Alq 3 )/indium tin oxide (ITO) were fabricated using vacuum evaporation and analyzed using an x‐ray photoelectron spectroscopy (XPS) depth profile technique. Diffusion of Ag into the Alq 3 layer was clearly observed. Applying a positive electron field enhanced the diffusion. Compared with pure Ag, the binding energy of diffused Ag 3d 5/2 at the interface increased slightly, and the contribution of Ag to the valence‐band spectra also was changed across the depth, implying a weak interaction between diffused Ag and the hydroxyquinoline ligands. Copyright © 2001 John Wiley & Sons, Ltd.
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