Ion beam sputter-deposited diamondlike films

Abstract

A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.36, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of ≳1011 Ω cm, densities of 2.1 g/cm3 for sputter-deposited films and 2.2 g/cm3 for simultaneously sputter-deposited and Ar ion-bombarded films. For ∠1700-Å thick films deposited by either process and at 5550 Å wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 6.7×104 cm−1, and the transmittance was 0.1.