Spatial uniformity of quantum efficiency of a silicon photovoltaic detector

Abstract

In the course of investigating the spatial uniformity of response of a silicon detector, an extensive experiment was conducted to examine the correlation between changes in reflectance, internal and external quantum efficiency as a function of position and wavelength on the detector. The sensitivity of the technique was tested and demonstrated in several ways. The examined detector was found to be suitably uniform for absolute radiometric purposes, and the small changes observed in external quantum efficiency can be easily accounted for by the dead layer model.