Comparison of experimental and theoretical carrier concentrations in heavily doped <i>n</i>-type silicon

Abstract

The Hall coefficient and conductivity of p-doped Si samples have been measured in a range of temperatures varying from 200 to 30 °K; from the elaboration of these measurements and neutron activation analysis, both donor and free-carrier concentrations were obtained. Comparison between the theoretical and experimental values of the electron density brought out that in these samples a modified conduction band coexists with an impurity band, thus confirming the results obtained in the same range of impurity concentration for As-doped Si. Some limitations of the theoretical approaches to the density of states versus energy relationships are discussed.