Electrical properties of selectively grown homoepitaxial diamond films

Abstract

Boron-doped homoepitaxial diamond films were selectively grown using sputtered SiO2 as a masking material. Uniform thickness, down to 50 nm, over a large area can be achieved with this technique. Hall mobility of selectively grown films is comparable to that of high-pressure high-temperature synthetic bulk diamond with a corresponding carrier concentration.