Applied Physics Letters · 1986 · 34 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor MaterialsThin FilmsLight-emitting DiodesLuminescent MaterialsOptical Thin FilmsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsCo-activator FunctionElectroluminescent MaterialsInorganic PhosphorsLuminous MaterialsLuminous TransmittancePhosphor MaterialsPhosphorescent MaterialsPhosphors
Thin-film electroluminescent devices employing a new phosphor material ZnS:Sm,P have been found to exhibit bright red emission. Luminous efficiency of ZnS:Sm,P phosphor films is higher than that of ZnS:Sm phosphor films in the range of annealing temperature above 500 °C. A brightness of 1000 cd/m2 and an efficiency of 8×10−2 lm/W have been obtained in the devices with ZnS:Sm(1 at. %),P(0.5 at. %) phosphor films annealed at 600 °C. These results indicate that P is an efficient co-activator for Sm in ZnS.
1