A high speed optoelectronic matrix switch using heterojunction switching photodiodes

Abstract

Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3 × 3 optoelectronic matrix switch. Biconical taper type optical power splitters were used to distribute the signals to the matrix switch crosspoints. Isolation and crosstalk losses were better than 63 dB over a frequency range of 10 Hz-400 MHz and 400 Mbit/s NRZ digital signals were switched with switching times shorter than 30 ns.