Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET - Concepedia

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Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

26

Citations

23

References

2011

Year

A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, P. Fernandéz Martinéz, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Peter Michael Gammon, Michael R. Jennings

Microelectronic Engineering

Wide-bandgap SemiconductorElectrical EngineeringEngineeringTemperature DependenceApplied PhysicsGan DevicesAluminum Gallium NitrideGan Power DeviceMicroelectronicsSemiconductor DeviceAl/ti-based Ohmic Contact

References

	Year	Citations

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