J. C. Moreno - Concepedia

Author

J. C. Moreno

Centre National de la Recherche Scientifique

Also Known As

J C Moreno, J. C. Moreno, J.-C. Moreno, J.C. Moreno, J.‐C. Moreno, Moreno, J.C.

Publications

759

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Institut de Microelectrònica de Barcelona Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications University of Warwick Institut de Recerca en Energia de Catalunya

About

J. C. Moreno is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	15	674
2	Applied Physics	14	16	688
3	Electrical Engineering	9	9	322
4	Materials Science	5	5	238
5	Materials Engineering	1	1	13

J. C. Moreno

Publications

688

Citations

H-Index

Page 1

	Year	Citations
Quantum cascade lasers emitting near 2.6 μm O. Cathabard, R. Teissier, J. Devenson, Applied Physics Letters PhotonicsQuantum ScienceQuantum PhotonicsQuantum Cascade LasersEngineering	2010	140
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy T. D. Veal, P. D. C. King, S. A. Hatfield, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorAluminium NitrideX-ray Spectroscopy	2008	93
GaN transistor characteristics at elevated temperatures Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesHigh Temperature Characteristics	2009	86
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates Amador Pérez‐Tomás, A. Fontserè, Jordi Llobet, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesAlgan/gan Vertical Bulk	2013	66
Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption François Médard, J. Zúñiga‐Pérez, P. Disseix, Physical Review B Materials SciencePhotonicsQuantum PhotonicsExperimental ObservationLow Finesse Cavities	2009	53
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Applied Physics Letters Materials ScienceTotal Contact AreaElectrical EngineeringGan TechnologyEngineering	2011	52
High temperature operation of short wavelength InAs-based quantum cascade lasers Pierre Laffaille, J. C. Moreno, R. Teissier, AIP Advances Optical PumpingPhotonicsRoom TemperatureEngineeringLaser Science	2012	26
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Microelectronic Engineering Wide-bandgap SemiconductorElectrical EngineeringEngineeringTemperature DependenceApplied Physics	2011	26
Growth of GaN based structures on Si(110) by molecular beam epitaxy Y. Cordier, J. C. Moreno, N. Baron, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsGan Power Device	2010	25
Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance Amador Pérez‐Tomás, A. Fontserè, Marcel Placidi, Semiconductor Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2012	25

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