High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers - Concepedia

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High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers

DOI Full Paper Access

48

Citations

13

References

2012

Year

Pierre Saint‐Cast, D. Kania, R. Heller, Saskia Kuehnhold, Marc Hofmann, J. Rentsch, R. Preu

Applied Surface Science

Materials EngineeringMaterials ScienceC-si Surface PassivationEngineeringThick Pecvd Al2o3Capping LayersSurface ScienceApplied PhysicsSurface EngineeringSilicon On InsulatorEpitaxial GrowthChemical Vapor Deposition

References

	Year	Citations

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