Concepedia

Energy gap in Si and Ge: Impurity dependence

G. D. Mahan

Journal of Applied Physics · 1980 · 288 citations · 21 references

DOI

Concepts

Abstract

The energy gap in silicon and germanium is calculated as a function of the concentration of donor impurities. The results are compared with the available data from optical experiments and devices. Previous theories are critically reviewed.

References

21

Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus

G. L. Pearson, J. Bardeen · Physical Review · 1949 · 912 citations

, , +17

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 752 citations

, , +13

Fine Structure in the Absorption-Edge Spectrum of Si

G. G. Macfarlane, Thomas McLean, J E Quarrington et al. · Physical Review · 1958 · 607 citations

, , +15

Excitons in Degenerate Semiconductors

G. D. Mahan · Physical Review · 1967 · 382 citations

, , +15

Fine Structure in the Absorption-Edge Spectrum of Ge

G. G. Macfarlane, Thomas McLean, J E Quarrington et al. · Physical Review · 1957 · 353 citations

, , +17