Effect of the starting amorphous structure on the solid-phase crystallization of silicon

Abstract

Abstract The effect of the deposition rate of amorphous silicon films grown by low-pressure chemical vapour deposition on the quality of furnace-crystallized films is studied. Numerous physical, optical and electrical characterization techniques have been used. The use of the X-ray diffraction technique in the study of polycrystalline silicon microstrains is particularly presented. Results show that, the higher the deposition rate, the higher is the quality of the polycrystalline silicon obtained. This quality is obtained near the limiting rate above which powder formation begins. This quality may be explained by the microstructure of the as-deposited amorphous films and in particular by the role of the low hydrogen content which delays the nucleation and increases the subsequent crystallization rate.