Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAs

Abstract

The generation rate of paramagnetic defects has been measured by means of Electron Paramagnetic Resonance over the 1015–1017-10n cm−2 fluence range, using a low flux (7×1010 10n cm−2 s−1) of fast neutrons; much higher yields are achievable than reported up to now. A comparison of 4.2- and 295-K spectra evidences a narrowing of the hyperfine structure separation of the components of the AsGa quadruplet with increasing temperature.