Electronics Letters · 2001 · 42 citations · 9 references
High-performance quantum dot lasers emitting at 980 nm with output powers of up to 4 W CW from a single facet (AR/HR coating, 100 µm stripe width) have been fabricated. Wall-plug efficiencies > 50% were achieved at room temperature. Owing to an improved carrier confinement output powers as high as 1 W CW can be obtained from the fundamental dot transition even at temperatures as high as 110°C.
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Low-threshold quantum dot lasers with 201 nm tuningrange
P.M. Varangis, H. Li, G.T. Liu et al. · Electronics Letters · 2000 · 133 citations
3.9 W CW power from sub-monolayer quantum dot diodelaser
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin et al. · Electronics Letters · 1999 · 98 citations