Journal of Applied Physics · 1992 · 13 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsIon ImplantationQuantum WellsSemiconductor DefectsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsAnnealingElectroluminescenceLow-energy Ion ImplantationPhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Well HeterostructuresQuantum Well Structures
We report the photoluminescence study of low-energy, low-dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low-energy (155 keV) oxygen ion implantation with doses as small as 5 × 1013 cm−2 after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 1016 cm−2).
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Implantation disordering of Al<i>x</i>Ga1−<i>x</i>As superlattices
P. Gavrilovič, D.G. Deppe, Kathleen Meehan et al. · Applied Physics Letters · 1985 · 84 citations