Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

Abstract

Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.