250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

Abstract

This paper presents investigations led to simplify the collector module of SiGeC HBTs in order to reduce technology cost. Outcome of this work is an HBT featuring an all-implanted collector with record f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T </sub> and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> (>250 GHz)