GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes

Abstract

Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nanochannel pattern into III-V semiconductors. The alumina mask showed high tolerance to RBE using a Br 2 /N 2 mixed gas system. GaAs and InP nanohole arrays with a high aspect ratio and with diameter uniformity of 2%, which was as good as that of the alumina mask, were obtained.