Nonlinear carrier dynamics in Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> compounds

Abstract

The nonlinear recovery dynamics of optically excited carriers in thin layer samples of GaInAsP (1.3 μm, 1.55 μm) and GaInAs (1.65 μm) have been studied by picosecond optical pump-probe measurements of absorption bleaching using pulses at 1.06 μm for both pump and probe. An evaluation of the data was performed by a careful computer model which takes into account the temporal development of the carrier density and absorption, the spatial averaging of the bleaching, and a convolution with the probe beam. The effective Auger coefficients, determined as curve fitting parameters, were found to be A(1.3 μm)=1.5×10−29 cm6/s, A(1.55 μm) =7.5×10−29 cm6/s, and A(1.65 μm)=9.8×10−29 cm6/s.