Applied Physics Letters · 1996 · 16 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsDefects In Electronic MaterialsElectron MicroscopyIon ImplantationSemiconductor DefectsStacking FaultsTransmission Electron MicroscopyAmorphous RegionsCross-sectional MicroscopyCrystalline StructureElectron Microscopy Of Stacking FaultsExtended DefectsHigh-resolution Electron MicroscopyImplantation-induced Defect FormationLattice Damage
High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed (LPPLA) GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a–c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLA technique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer.