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Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure
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1999
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Materials ScienceSemiconductorsOptical MaterialsLuminescence PropertiesEngineeringCrystalline DefectsPhotoluminescenceOptoelectronic MaterialsApplied PhysicsHp EffectSemiconductor Device FabricationOptoelectronic DevicesArgon PressureSio2 Surface FilmThin FilmsSilicon On InsulatorLuminescence PropertyChemical Vapor Deposition
The effect of annealing at argon pressure, HP, up to 1.5 GPa on photoluminescence, PL, of oxygen-containing silicon (of Czochralski grown, Cz-Si, and of oxygen-implanted, Si:O) and of thermally — grown SiO2 films was investigated. Pressure-annealing of Cz-Si and Si:O at 720 to 1400 K affects the intensity of dislocation-related PL lines in the infrared, which follows from HP effect on oxygen precipitation in silicon and Si:O. For the first time visible/ultraviolet PL of the SiO2 surface film was detected after subjecting it to pressure treatment at (1400 to 1550) K, (0.9 to 1.5) GPa.