Ultraviolet photoemission studies of GaAs(100) surfaces chemically stabilized by H2S treatments

Abstract

We report photoemission studies of GaAs(100) surfaces treated with H2S. Our high-resolution core level photoemission data show that these surfaces are completely terminated by a GaSx species and the treated surface is stable in air or water. Thus a H2S treatment might result in better device quality surfaces and interfaces than the surfaces prepared by recently proposed chemical treatments involving Na2S or (NH4)2S.