Journal of Applied Physics · 1993 · 88 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsTransport PhenomenaCarrier TransportCharge Carrier TransportMass TransferMass TransportScanning Probe MicroscopySemiconductor PhysicsDiffusion In Metal Thin FilmsGrain Growth ModelingMass Transport AnalysisMass Transport PhenomenaMetal Thin FilmsScanning Tunneling Microscopy Of Surface DiffusionThermal Runaway
We present the results of an ultrahigh vacuum (UHV) scanning-tunneling-microscopy study of large scale mass transport in current carrying metal films. Scans were taken in situ on a current carrying 2100-Å-thick Ag film with current densities ranging from 5.0×104 A/cm2 up to 3.2×105 A/cm2, at which point the sample failed due to a runaway thermal fusing mechanism. Axial UHV inchworms allowed us to obtain data from the same 2-μm-square region of the sample throughout the experiment in spite of large temperature-induced drifts. Calculations of the driving forces demonstrate that the electromigration driving force was dominant for this current range. Significant topographical changes were observed including current aligned grain growth, current induced faceting, and complex mass flow divergences. A model that explains the observed divergences is presented. It is based upon diffusion in the presence of local inhomogeneities of the electric field.
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P Shing Ho, T Kwok · Reports on Progress in Physics · 1989 · 823 citations
Natural Sciences, Electrical Engineering, Materials Science +17
Effect of driving forces on atom motion
H. B. Huntington · Thin Solid Films · 1975 · 74 citations