Publication | Closed Access
p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor
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Citations
17
References
2011
Year
Materials EngineeringIi-vi SemiconductorChemical EngineeringEngineeringSurface ScienceApplied PhysicsChemistryN-type Germanium LayersMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionIso-butyl GermaneGermanene
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