The effects of chemical doping with F₄TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

Abstract

We have studied the effects of p-type chemical doping with F4TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). The transmission-line-model technique using multi-probe CNFETs has been employed to investigate the effects of chemical doping on the channel resistance and contact resistance. It has been found that chemical doping is effective in the reduction of the contact resistance as well as the channel resistance. The device performances of top-gate CNFETs such as transconductance, on-resistance, and on/off ratio were improved by the F4TCNQ chemical doping on the access regions.