IEEE MTT-S International Microwave Symposium digest · 2007 · 10 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsBias Circuit DesignHigh-gain AmplifiersMicrowave Amplifier DesignPhased Array AntennasPower OutputReturn LossRobustnessWideband Amplifiers
A monolithic two stages high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS HBT process called HB20P (GalnP/GaAs) in term of breakdown, the consideration of mismatch and overdrive stability in the design. The MMIC HPA which includes a bias control circuit and a TTL interface in a surface of 18.4 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> provides 11 W output power associated to a PAE of about 43% at ambient temperature and can operate at 8 dB compression with an output return loss of 1.7, in a wide temperature range. The high level of performance, the low sensitivity to the environment and the integrated biasing control make of this amplifier an excellent candidate for X band applications such as phased array active antennas.
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