Impurity levels in layer semiconductor <i>p</i>-GaSe doped with Mn

Abstract

The impurity levels in Mn-doped GaSe have been investigated by using photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS) measurements. The emission band at 1.82 eV is observed on the PL spectra of the samples doped with Mn of wide range from 0.01 to 1.0 at. %. We find, from the temperature dependences of PL intensity and peak energy, that the 1.82 eV emission band is due to the transition between the conduction band and the acceptor level at 0.32 eV above the valence band. The acceptor level located at about 0.34 eV above the valence band is detected by using HE and DLTS measurements. The dominant acceptor level in the carrier transport shows almost the same position as that of the radiative recombination center. This acceptor level is probably associated with the defects formed by Mn atoms in the interlayer or interstices.