The nitrogen acceptor energy in ZnTe measured by Hall effect and optical spectroscopy

Abstract

The binding energy of the nitrogen acceptor in zinc telluride is measured. The zinc telluride samples were grown by molecular beam epitaxy using a plasma source for nitrogen doping. The acceptor ionization energy at infinite dilution limit is deduced from Hall effect analysis to be 53.2±1.5 meV. This value agrees with that of the acceptor ground state energy obtained from photoluminescence spectra, 53.6±0.7 meV. The acceptor energy in strain-free material may be slightly higher due to some residual tensile strain in the samples.