Phase formation and reaction kinetics in the thin-film Co/GaAs system

Abstract

The solid state reaction between a Co thin film and (100) GaAs was investigated using Rutherford backscattering spectrometry. At 400 °C a reacted layer of composition Co:Ga:As=2:1:1 was observed to form. This reaction product obeys diffusion controlled growth kinetics and maintains its composition for annealing (400 °C) from 15 min up to 24 h.