Stoichiometry, morphology and structure of CdS layers grown on InP(100) from atomic sulfur beam generated from H2S gas and thermally evaporated Cd using molecular beam epitaxy - Concepedia

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Stoichiometry, morphology and structure of CdS layers grown on InP(100) from atomic sulfur beam generated from H2S gas and thermally evaporated Cd using molecular beam epitaxy

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Citations

13

References

2003

Year

Joo Won Choi, A. Bhupathiraju, M. Arif Hasan, John M. Lannon

Journal of Crystal Growth

Materials ScienceIi-vi SemiconductorEngineeringApplied PhysicsH2s GasCds LayersMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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