Publication | Closed Access
Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers
32
Citations
21
References
2011
Year
Materials ScienceMaterials EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthCarbide
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